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Updated on 22nd March, 2023 , 8 min read
A semiconductor device known as a transistor is commonly utilized to switch or amplify electronic signals within an electric circuit. Transistors are primarily categorized into two types: field-effect transistors (FETs) and bipolar transistors (also called bipolar junction transistors, BJTs). Additionally, there are numerous other types of transistor that are classified based on their characteristics, advantages, and disadvantages.
Field-effect transistors are unipolar devices that lack a PN junction in their current-carrying path. They are generally divided into two categories: N-channel and P-channel transistors. On the other hand, bipolar transistors employ both holes and electrons as charge carriers and are classified as NPN and PNP transistors.
Lastly, another type of transistor is insulated-gate bipolar transistors, which contain both a voltage-driven MOSFET and a high-current transistor.
A transistor is a sort of electrical device made up of p-type and n-type semiconductors. The transistor is a configuration in which a semiconductor is placed between two semiconductors of the same sort.
A transistor depends on the idea that it enables you to regulate the flow of current through one route by changing the strength of the tiniest quantity of current going through a second path.
There are many Types of Transistor that can be classified on the basis of their application. Some of these are –
Bipolar Junction Transistors are those kinds of transistors that are made up of three regions: the base, collector, and emitter. Bipolar junction transistors, unlike FET transistors, are current-controlled electronics.
Field-Effect Transistors are those Types of Transistor that are made up of three regions: the gate, source, and drain. FETs are distinct from bipolar transistors in that they are voltage-controlled bipolar transistors. The current flow from the source to the drain is controlled by the voltage given to the transistor's gate.
The table below shows the other Types of Transistor with descriptions:
|
Types of Transistor |
Descriptions |
|
Avalanche Transistor |
It is a type of Bipolar Junction Transistor that processes the region of collector-current/collector-to-emitter voltage area. It has avalanche-mode operations that change between high currents in less than nanoseconds. |
|
Diffusion Transistor |
These are a type of BJT that is created via dopant diffusion into a semiconductor substrate. Example: the micro-alloy diffused transistor of Philco. |
|
Darlington Transistor |
It's a transistor circuit with two distinct transistors in it. It is more capable of gaining current. Its circuit can also be contained within an integrated circuit. |
|
Schottky Transistor |
Schottky Transistors are Types of Transistor that have been integrated with a Schottky diode. By introducing that type of diode, the transistors are prevented from saturating due to the diversion of high input current. |
|
Heterojunction Bipolar Transistor |
These transistors are utilized in higher-frequency analog or digital microwaves. It has a faster switching speed and a higher lithographic yield. They have a higher efficiency of emitter injection. |
|
Multiple-Emitter Transistor |
The emitters are used with input signals in these transistors. It can reduce switching time and power consumption. |
Transistors have a wide range of applications in electronics and other industries. Here are some common applications of transistors:
Overall, transistors are essential components in modern electronics and have revolutionized the way we use and interact with technology.
Answer: A bipolar junction transistor (BJT) is a type of transistor that consists of two pn-junctions, namely the emitter-base junction and the base-collector junction. It operates by controlling the flow of current between the collector and emitter terminals using a small current at the base terminal. When a small current is applied at the base terminal, it causes a large current to flow between the collector and emitter terminals, thereby amplifying the signal.
Answer:A field-effect transistor (FET) differs from a BJT in that it controls the flow of current through a semiconductor channel using an electric field rather than a current. FETs have three terminals: source, gate, and drain. The gate is separated from the channel by a thin oxide layer, and the electric field generated by the gate controls the flow of current between the source and drain.
Answer:An insulated-gate bipolar transistor (IGBT) is a type of transistor that combines the high input impedance of a MOSFET with the low on-state resistance of a bipolar junction transistor (BJT). The IGBT has a pn-junction between the emitter and collector, which is controlled by a MOSFET-like gate structure. The IGBT is used in power electronics applications due to its high voltage and current handling capabilities. The main difference between an IGBT and a MOSFET is that the former can handle higher currents but has higher switching losses.
Answer:A Darlington transistor is a type of BJT configuration that consists of two BJTs connected in a common-emitter configuration. It is used to achieve high current amplification with low input current. The output current of the first BJT is amplified by the second BJT, resulting in a much higher current gain than that of a single BJT.
Answer: A phototransistor is a type of transistor that is sensitive to light. It works by converting light into an electrical signal. When light strikes the base region of the phototransistor, it generates an electron-hole pair, which in turn causes a current to flow between the emitter and collector terminals. The amount of current flowing through the phototransistor is proportional to the amount of light striking the base region. Phototransistors are used in light detection applications.
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By - Nikita Parmar 2023-08-25 09:48:44 , 11 min readA transistor is a semiconductor device that is used to amplify or switch electronic signals. It consists of three layers of doped semiconductor material and has three terminals: emitter, base, and collector.
There are several types of transistors, including bipolar junction transistor (BJT), field-effect transistor (FET), junction field-effect transistor (JFET), metal-oxide-semiconductor field-effect transistor (MOSFET), insulated-gate bipolar transistor (IGBT), Darlington transistor, Schottky transistor, power transistor, phototransistor, etc.
The main difference between a BJT and an FET is that a BJT controls the flow of current through the base terminal using a small current, whereas an FET controls the flow of current through a semiconductor channel using an electric field.
The main difference between a BJT and an FET is that a BJT controls the flow of current through the base terminal using a small current, whereas an FET controls the flow of current through a semiconductor channel using an electric field.
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a type of FET that uses an insulated gate to control the flow of current between the source and drain terminals.
An IGBT (Insulated-Gate Bipolar Transistor) is a type of transistor that combines the high input impedance of a MOSFET with the low on-state resistance of a BJT. It is used in power electronics applications due to its high voltage and current handling capabilities.
A Darlington transistor is a type of BJT configuration that consists of two BJTs connected in a common-emitter configuration. It is used to achieve high current amplification with low input current.
A Schottky transistor is a type of BJT that has a Schottky barrier at the base-emitter junction instead of a pn-junction. It is used in high-frequency and high-speed applications.
A power transistor is a type of transistor that is designed to handle high voltage and current levels. It is used in power supply circuits, motor control circuits, and other high-power applications.
A phototransistor is a type of transistor that is sensitive to light. It is used in light detection circuits and other applications that require detection of light.
A JFET (Junction Field-Effect Transistor) is a type of FET that has a junction between the gate and channel regions. It is used in low-noise and high-input impedance applications.
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